To eliminate a partial etching residue of a metal film and a barrier film while a semiconductor film is left alone, by allowing a sample temperature to be a specified value when etching with plasma a metal film of a multi-layer film which comprises a metal film, a barrier film, and a semiconductor film.
A sample 106 which comprises a multi-layer film comprising a metal film, a barrier film, and a semiconductor film is sucked to a sample stage 108 while a plasma 105 is generated with an inert gas to raise the temperature of the sample. After confirming with a temperature sensor 107 that a sample temperature is 100-200°C or above, a plasma 105 is generated to etch the metal film and the barrier film up to the upper layer part of the semiconductor film. With etching using the plasma 105 at a high temperature, the etching speed of the metal film is raised while that of the semiconductor film is not raised. Thus, the semiconductor film is left alone with no partial etching residue for the metal film or barrier film.
ARASE TAKAO
AKIYAMA HIROSHI
ONO TETSUO
TOKUNAGA TAKAFUMI
UMEZAWA TADASHI
KOJIMA MASAYUKI
NOJIRI KAZUO
KAWAKAMI HIROSHI
HITACHI TECHNO ENG
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