Title:
SYNTHESIS OF DIAMOND
Document Type and Number:
Japanese Patent JPS5879899
Kind Code:
A
Abstract:
PURPOSE:To increase the growth rate of a single crystal of diamond, and to obtain a large-sized diamond single crystal, easily, by cutting a seed diamond crystal at a specific plane, and making the growth of a diamond crystal on the plane. CONSTITUTION:A diamond crystal is cleaved, cut or polished to expose its (111) plane, and used as a seed crystal. The seed crystal is placed in a mixture 2 of carbon and a solvent metal, and the mixture is put into a cylindrical carbon heater interposing a pressure medium 3 therebetween. The cylinder is set in an ultra-high pressure device, and pressed under definte high temperature and pressure to allow the rapid growth of diamond crystal on the (111) plane. A large- sized diamond crystal having low impurity content can be prepared easily by this process.
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Inventors:
YATSU SHIYUUJI
Application Number:
JP17840081A
Publication Date:
May 13, 1983
Filing Date:
November 09, 1981
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
C01B31/06; B01J3/06; C30B9/00; (IPC1-7): C01B31/06; C30B9/00; C30B29/04
Attorney, Agent or Firm:
Akira Uchida