Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
TEMPERATURE ABNORMALITY DETECTION CIRCUIT FOR SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
Document Type and Number:
Japanese Patent JPH0661414
Kind Code:
A
Abstract:

PURPOSE: To provide a temperature abnormality detection circuit for semiconductor integrated circuit devices which can easily detect the temperature abnormality of a semiconductor integrated circuit device and with which the temperature can be set with high accuracy.

CONSTITUTION: The detection circuit is formed on the semiconductor chip of a semiconductor integrated circuit device, detects the abnormal temperature rise of the semiconductor chip, and outputs a temperature abnormality signal when the circuit detects an abnormal temperature. In addition, the detection circuit is constituted of a temperature detection circuit 11 which outputs the temperature state of the semiconductor chip, temperature setting circuit 12 which is set in its designing and manufacturing states, comparator circuit 13 which compares the outputs of the circuits 11 and 12 with each other, and correction circuit which corrects the accuracy of the detection circuit when the accuracy drops. When the temperature detected by means of the circuit 11 exceeds a set value, the output difference between the circuits 11 and 12 becomes larger due to a difference in changing factor between the outputs of the circuits 11 and 12 caused by the temperature change and the circuit 13 outputs an interrupt signal for the temperature abnormality signal.


Inventors:
ISHII YOSHIYUKI
KOBAYASHI KOJI
NISHIKAWA HIDEKI
Application Number:
JP20879392A
Publication Date:
March 04, 1994
Filing Date:
August 05, 1992
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
HITACHI LTD
HITACHI MICOM SYST KK
International Classes:
G01K7/00; H01L23/58; (IPC1-7): H01L23/58; G01K7/00
Attorney, Agent or Firm:
Ogawa Katsuo