To obtain a monomer to be a raw material for a polymer for a resist material which is excellent in all of adhesiveness, transparency, etching resistance and resolution in a photolithography using a wavelength of ≤ 300 nm, especially ArF excimer laser, as a light source, and to obtain its polymer and a resist material containing the polymer as a base resin, and to provide a pattern forming method using the resist material.
The subject (meth)acrylate compound is represented by formula (1). In formula (1), R1 represents hydrogen atom or methyl group, R2 represents a 1-10C straight-chain, branched-chain or cyclic univalent hydrocarbon group. Alternatively, R2s themselves may join mutually and may form a ring together with a carbon atom bonded with R2. The polymer obtained by using the (meth)acrylate compound is excellent in transparency, especially in transparency at an excimer laser exposure wavelength, and excellent in dry etching resistance, and further, the resist material obtained by using the polymer well respond to high energy rays, excellent in resolution and useful for the microfabrication by electron beams and far-ultraviolet rays.
KANOU TAKESHI
HASEGAWA KOJI
Saori Shigematsu
Katsunari Kobayashi
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