Title:
THERMOELECTRIC SEMICONDUCTOR MATERIAL AND THERMOELECTRIC MODULE USING THE SAME
Document Type and Number:
Japanese Patent JP3219244
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain a thermoelectric semiconductor material whose orientation is increased and whose production yield is enhanced by a method wherein a thermoelectric semiconductor material comprising a hexagonal crystal structure is plastically worked and the C-plane of subcrystal particles constituting a texture is formed so as to be oriented to a specific axis or a specific plane.
SOLUTION: When an n-type Bi2Te3 thermoelectric semiconductor material is manufactured, a Bi element simple substance, a Te element simple substance and an Se element simple substance are weighed so as to obtain a stoichiometric ratio of Bi2Te2.7Se0.30, they are sintered, and an ingot 4 is manufactured. An upsetting apparatus is provided with a base 1, with a cylindrical sleeve 2 and with a punch 3 which is formed so as to be passed through the sleeve 2, and it is constituted in such a way that the ingot 4 is placed on the base 1 so as to be pressed by the punch 3. The apparatus is made of cemented carbide, and it is heated up to about 450°C by a heating device. By the apparatus, the ingot 4 is pressurized only from two directions, i.e., the upper direction and the lower direction, other directions are set to a free state, and it is forged so as to make the direction of a C-axis uniform.
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Inventors:
Katsushi Fukuda
Yasunori Sato
Ken Kajiwara
Yasunori Sato
Ken Kajiwara
Application Number:
JP26938997A
Publication Date:
October 15, 2001
Filing Date:
September 16, 1997
Export Citation:
Assignee:
KOMATSU LTD.
Komatsu Electronics Co., Ltd.
Komatsu Electronics Co., Ltd.
International Classes:
C22C1/04; H01L35/16; H01L35/32; H01L35/34; (IPC1-7): H01L35/34; H01L35/16; H01L35/32
Domestic Patent References:
| JP63138789A | ||||
| JP1106478A | ||||
| JP341780A | ||||
| JP316281A | ||||
| JP410674A |
Attorney, Agent or Firm:
Takahisa Kimura (1 outside)