PURPOSE: To provide a structure of ferroelectric thin film capacitor in which the dielectric layer is protected against crack and delamination although high temperature is required during fabrication.
CONSTITUTION: In a capacitor where a lower electrode layer 2, a dielectric layer 4 of metal oxide, and an upper electrode layer 5 are laminated sequentially on a substrate 1, an intermediate layer 3 is interposed between the lower electrode layer 2 and the dielectric layer 4. The intermediate layer 3 is composed of a metal oxide of same element as the dielectric layer 4 wherein the oxygen concentration is set low on the electrode layer 2 side and set high on the dielectric layer 4 side. The capacitor is fabricated by starting the formation of dielectric layer 4 without introducing any oxidizing gas and then introducing an oxidizing gas gradually. Consequently, stress between the electrode and the dielectric layer is scattered and the adhesion is enhanced. This method protects the dielectric layer 4 against delamination and crack even during high temperature heat treatment required for crystallization of dielectric.
ARAI TOSHIYUKI
KISHIMOTO MUNEHISA
