Title:
THIN FILM FORMING METHOD BY MAGNETRON SPUTTERING AND APPARATUS THEREFOR
Document Type and Number:
Japanese Patent JP3343620
Kind Code:
B2
Abstract:
PURPOSE: To obtain uniformity between the film thickness distributions of respective thin films in the case of continuous formation of the different thin films by changing process gases within the same vacuum vessel.
CONSTITUTION: Orthogonal electric fields and magnetic fields are acted on a space where a target 2 and a substrate 6 are disposed to face each other and the process gases are introduced into the vacuum vessel to form plasma, by which the thin films including the particles sputtered from the target 2 are deposited on the surface of the substrate 6 in this magnetron sputtering. Magnetic field forming means 3, 14 for acting the above-mentioned magnetic fields are so constituted that the magnetic flux density of the space where the target and the substrate are disposed to face each other is adjusted. The magnetic flux density is changed according to the compsn. of the process gases to be introduced into the vacuum vessel 1.
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Inventors:
Masahiko Kobayashi
Nobuyuki Takahashi
Nobuyuki Takahashi
Application Number:
JP11680592A
Publication Date:
November 11, 2002
Filing Date:
April 09, 1992
Export Citation:
Assignee:
ANELVA Co., Ltd.
International Classes:
C23C14/35; C12Q1/02; C23C14/34; G01N1/30; H01J37/34; C12Q; (IPC1-7): C23C14/35
Domestic Patent References:
| JP59208072A | ||||
| JP62107064A | ||||
| JP2156536A | ||||
| JP637364A |
Attorney, Agent or Firm:
Masatsugu Suzuki