THIN FILM FORMING METHOD AND DEVICE THEREFOR

Japanese Patent JP3783106

B2

PURPOSE: To provide a thin film forming method and device thereof with which desired characteristics are obtainable by successively forming thin films consisting of plural layers on substrates made of an insulating material while decreasing processes. CONSTITUTION: Plural vacuum treatment chambers 1a, 1b, 1c... are successively installed between a load locking chamber 15 and an unload locking chamber 16. The substrates 2 are made transferable via substrate holders 3a, 3b, 3c.... The vacuum treatment chamber 1b is provided with a changing mechanism capable of rotating the substrates 2 relative to the substrate holders and the vacuum treatment chamber 1e is provided with a bias sputtering mechanism. The substrates 2 are rotated in the vacuum treatment chamber 1b and electrical conduction is assured between the substrate holder 3c and the films formed on the substrates 2. Bias impression is made sure in the vacuum treatment chamber 1e.