PURPOSE: To form a thin film of very fine structure of two-dimensional or three-dimensional atomic order, by applying atomic order fine process to an object to be processed by using a probe pin of a scanning tunnelling microscope, and forming a specified film on the object to be processed.

CONSTITUTION: The tip of a probe pin 10 of an STM is made to approach the surface of a thin film 11, and the state that a tunnelling current is to flow is obtained. In this state, a pulse voltage 44 is applied between the probe pin 10 and a specimen 12 (thin film 11). Thereby the atom emission phenomenon called as electric field evaporation is generated, minute parts of the thin film in the atomic order region is sublimated, and a fine recess 13 is formed on the surface. When a fine protrusion 14 is formed, the inside of the STM chamber is once very highly vacuumized, and objective reaction gas is introduced. Atoms constituting the probe pin 10 are subjected to electric field evaporation. Atoms 15 in the reaction gas component are deposited on the thin film 11, and the protrusion 14 is formed. When a recess 16 is formed by cutting mechanism, scanning in the arrow direction is performed by using the probe pin 10 while it is thrusted in the thin film 11.