Title:
THIN-FILM SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JPH06296023
Kind Code:
A
Abstract:
PURPOSE: To obtain a method for improving the reliability of a semiconductor device such as a thin-film transistor(TFT) being excellent in characteristics and reliability.
CONSTITUTION: In a process of forming a semiconductor device such as a thin- film transistor(TFT) on an insulating substrate, a film 102 composed mainly of aluminum nitride is formed and then the semiconductor device such as the TFT is formed thereon directly, or a film 103 composed mainly of silicon oxide or the like is formed on that film and the device is formed thereon. This method is applied to a thin-film integrated circuit wherein the semiconductor device is integrated and, in particular, to a liquid crystal display of an active matrix type.
Inventors:
YAMAZAKI SHUNPEI
Application Number:
JP28598893A
Publication Date:
October 21, 1994
Filing Date:
October 20, 1993
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB
International Classes:
H01L29/78; H01L21/20; H01L21/336; H01L21/77; H01L21/84; H01L29/786; (IPC1-7): H01L29/784
Domestic Patent References:
| JPS59121876A | 1984-07-14 | |||
| JPS60245174A | 1985-12-04 | |||
| JPH0659280A | 1994-03-04 | |||
| JPH05206468A | 1993-08-13 |