Title:
THIN FILM SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Document Type and Number:
Japanese Patent JP2005093757
Kind Code:
A
Abstract:
To reduce the aspect ratio of a contact hole formed in an insulating layer in the forming region of a transfer device, in a substrate on which two kinds of semiconductor devices of the transfer device and a film forming device are formed in a mixed state.
In the forming region of a single crystal Si thin film transistor 11, a relay pad 33 is formed at a predetermined place in the insulating layer thereof. Connecting wirings penetrating the insulating layer are formed as connecting wirings 34, 35 through the relay pad 33.
Inventors:
TAKATO YUTAKA
ITOGA TAKASHI
OGAWA YASUYUKI
ITOGA TAKASHI
OGAWA YASUYUKI
Application Number:
JP2003325781A
Publication Date:
April 07, 2005
Filing Date:
September 18, 2003
Export Citation:
Assignee:
SHARP KK
International Classes:
H01L21/02; H01L21/336; H01L21/762; H01L21/768; H01L23/522; H01L21/77; H01L21/84; H01L23/52; H01L27/12; H01L29/786; (IPC1-7): H01L27/12; H01L21/336; H01L21/768; H01L29/786
Domestic Patent References:
| JPH04362924A | 1992-12-15 | |||
| JPH05267563A | 1993-10-15 | |||
| JPH1197654A | 1999-04-09 | |||
| JPH08139333A | 1996-05-31 | |||
| JPH0541478A | 1993-02-19 | |||
| JPH0845935A | 1996-02-16 | |||
| JPH08204012A | 1996-08-09 | |||
| JPH1124106A | 1999-01-29 | |||
| JPS5948950A | 1984-03-21 | |||
| JPH07503557A | 1995-04-13 |
Attorney, Agent or Firm:
Kenzo Hara
Ryuichi Kijima
Ichiro Kaneko
Ryuichi Kijima
Ichiro Kaneko