To make it possible to reduce stray capacities due to an overlapping of source and drain electrodes on a gate electrode by a method wherein the source and drain electrodes are respectively connected with semiconductor contact parts on both sides of a channel protective film.

Source and drain electrodes 46 and 48 are respectively made contact with the sidewalls of a channel protective film 40 and are not overlapped on the film 40. As a gate electrode 34 is provided in roughly alignment with the film 40, an overlapping of the electrodes 46 and 48 on the electrode 34 is small, whereby stray capacities, which are formed between the electrodes 46 and 48 and the electrode 34, are very reduced. Semiconductor contact parts 42 and 44 are offset in closer to the inside of the film 40 and are provided and the parts 42 and 44 are covered with the film 40 along with an operating semiconductor film 38. Thereby, the electrodes 46 and 48 can be brought into contact electrically with the film 38.