Title:
THIN-FILM TRANSISTOR SUBSTRATE
Document Type and Number:
Japanese Patent JPH03174516
Kind Code:
A
Abstract:
PURPOSE:To obtain the high light transmittance thin-film transistor (TFTR) substrate with easy working without requiring reference wiring electrodes by adopting the structure to electrically connect the (n-1)th reference electrode to the n-th gate wiring electrode. CONSTITUTION:Gate electrodes 1 and the gate wiring electrodes (scanning electrodes) 2 are formed by the same stage and a gate insulating film and a semiconductor film 9 are formed. After the unnecessary parts of the semiconductor film 9 are etched away, the insulating film of contact hole 14 parts is removed. The drain electrodes 3, the reference electrodes 4 and the source electrodes 5 are thereafter formed by the same stage and further, display electrodes 6 are formed to constitute the TFTR substrate. The (n-1)th reference electrode 4 counted in the direction of the gate wiring electrodes (scanning electrodes) 2 of this TFTR substrate is directly electrically connected to the n-th gate wiring electrode 2. The need for the reference wiring electrodes is eliminated in this way and the TFTR substrate which allows easy working and has high light transmittance is obtd.
Inventors:
ICHIKAWA YOSHIHARU
Application Number:
JP31581089A
Publication Date:
July 29, 1991
Filing Date:
December 04, 1989
Export Citation:
Assignee:
NEC CORP
International Classes:
G02F1/136; G02F1/1368; H01L29/78; H01L29/786; (IPC1-7): G02F1/136; H01L29/784
Attorney, Agent or Firm:
Uchihara Shin