Title:
THIN-FILM TRANSISTOR
Document Type and Number:
Japanese Patent JP2953201
Kind Code:
B2
Abstract:
PURPOSE: To provide a thin-film transistor of bottom-gate type in which source and drain regions have their respective offset lengths to decrease leakage current.
CONSTITUTION: A source region 107a and a drain region 108a are formed on the surface of a CVD silicon oxide film 103. The ends of the source and drain regions are extended by thermal diffusion to a given depth from the upper edge of a groove, which extends to a gate electrode 102a through the silicon oxide film 103.
Inventors:
KITAKATA MAKOTO
Application Number:
JP17513692A
Publication Date:
September 27, 1999
Filing Date:
July 02, 1992
Export Citation:
Assignee:
NIPPON DENKI KK
International Classes:
H01L29/78; H01L21/336; H01L29/786; (IPC1-7): H01L29/786; H01L21/336
Domestic Patent References:
| JP5243269A |
Attorney, Agent or Firm:
Naoki Kyomoto
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