PURPOSE: To provide a thin film transistor able to improve the numerical aperture in case a higher ON-current and a lower OFF-current are available while being applied to a liquid crystal display device.

CONSTITUTION: A gate electrode 12 is formed on one side while a semiconductor thin film 15, a source electrode 18 and a drain electrode 19 are formed on the other side having the insulating films 13, 14 between. The semiconductor thin film 15 consists of silicon carbide containing a fine crystal phase formed by performing a film formation process forming a silicon carbide semiconductor film by plasma decomposition of gaseous raw material containing silicon and carbon and a hydrogen plasma treatment process subjecting this semiconductor film to a treatment one time or two times or more.