To provide a thin silicon wafer for making reliable gettering capacity corresponding to thinning and for improving the reliability, and to provide a method of manufacturing of the thin silicon wafer.
The method of manufacturing a thin silicon wafer comprises: a thinning process S3 for polishing a rear surface of the silicon wafer to reduce the thickness of the silicon wafer by grinding after a device structure is formed on a front surface of the silicon wafer; a mirror surface forming process S4 for processing the rear surface of the silicon wafer into a mirror surface using a chemical mechanical polishing method; and a modifying process S5 for dispersing abrasive grains that are harder than those used to form the mirror surface in the mirror surface forming process and forming a damaged layer, serving as a gettering sink for a heavy metal, on the rear surface of the silicon wafer using the chemical mechanical polishing method. The thickness of the damaged layer in a wafer depth direction is set by the chemical mechanical polishing method in the modifying process S5 to control the gettering capability of the damaged layer.
OMOTE SHUICHI
Tadashi Takahashi
Yasuhiko Murayama