PURPOSE: To enable an Al wiring pattern to be formed through a hot CVD method direct on a substrate on which Si, hydrogen-terminated Si, or SiO2 is patterned.

CONSTITUTION: When a substrate is irradiated with synchrotron emission light in the presence of Al (CH3)2H, an AlC film 17 which serves as both a CVD- retardant film and a protective film is formed when emission light is inner-shell electron excitation light or a metal Al, 207 which causes a CVD is formed when emission light is valence electron excitation light. As mentioned above, irradiation light is so changed in energy as to have a different influence on a hot CVD. A detardant/protecting film 17 is formed by irradiation with inner- shell electron excitation light (a), and a CVD causing film 20 is formed by irradiation with valence electron excitation light (b). Thereafter, a hot CVD is carried out throughout the surface to form an Al wiring 21 (c). Lastly, an ARC film 17 is formed as a protective film by irradiation with inner-shell electron excitation light.