FORMING METHOD OF INSULATING FILM AND SEMICONDUCTOR DEVICE USING THE SAME

Title:

FORMING METHOD OF INSULATING FILM AND SEMICONDUCTOR DEVICE USING THE SAME

Document Type and Number:

Japanese Patent JPH0745608

Kind Code:

A

Abstract:

PURPOSE: To form an insulating film of high reliability, and improve operation characteristics of a semiconductor device by using the film.

CONSTITUTION: An SiOx film 2 and an amorphous Si film 3 are laminated in order on a single-crystal Si substrate 1. Only the amorphous Si film 3 is selectively heated by excimer laser annealing of XeCl or KrF in an N2O atmosphere or a NH3 atmosphere. The Si film 3 is turned into an SiOxNy film 4 or an SixNy film 5 by nitriding or oxidizing nitriding. By using this two-layered lamination film system as a gate insulating film 6, a MOSFET is constituted. Differently from the conventional gate insulating film which is subjected to an RTN(rapid thermal nitriding) process, nitrogen is scarcely distributed in the SiOx film, so that electron trap is not generated in the film. The threshold voltage and the mutual conductance of the MOSFET can be stably maintained for a long term. As the result of a low temperature process, adverse influence is not exerted upon an impurity profile.

Inventors:

YAMAMOTO HIROSHI

Application Number:

JP22659893A

Publication Date:

February 14, 1995

Filing Date:

July 31, 1993

Export Citation:

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Assignee:

SONY CORP

International Classes:

H01L21/318; H01L21/268; H01L21/822; H01L21/8242; H01L21/8247; H01L27/04; H01L27/10; H01L27/108; H01L29/78; H01L29/788; H01L29/792; (IPC1-7): H01L21/318; H01L21/268; H01L27/04; H01L21/822; H01L21/8242; H01L27/108

Attorney, Agent or Firm:

Akira Koike (2 outside)

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