PURPOSE: To obtain a semiconductor device which is excellent in surface leveling of an SiN film and has a little operation delay ascribing to the parasitic capacitance accompanied with this film by forming it, using an organic Si compd. contg. N and F.

CONSTITUTION: An SiN film 14 is formed from an organic Si compd. contg. N and F, using a CVD apparatus and then annealed in a forming gas of H2 diluted by N2 at 3%. The corrosicn test was made in a hydrochloric acid soln. and no corrosion of an Al interconnection 13 was seen and it is found that uneven parts of the interconnection 13 are enough covered with the film 14. Thus, an SiN film excellent in surface leveling performance can be formed and hence a semiconductor device having a high reliability can be obtained. The operation delay ascribing to the parasitic capacitance can be reduced and hence a high speed semiconductor device can be obtained.