Title:
EPITAXIAL GROWTH METHOD OF AMORPHOUS SILICON OR POLYCRYSTALLINE SILICON ON WAFER
Document Type and Number:
Japanese Patent JPS5846619
Kind Code:
A
Abstract:
PURPOSE:To make the temperature control easy, by a method wherein tubular lamps with whole radiating ray varying at a moment in sequence are used as a heat source. CONSTITUTION:A wafer 8 is inserted in a heating furnace and lamps 100 are lit. After about 3-5sec, alpha-Si layer is heated to 1,100-1,400 deg.C in nearly uniform distribution and held at the temperature. Only a lamp 100a at an end of the wafer is lit by excessive input, and then a lamp at the right side is lit by excessive input in sequence. The alpha-Si layer attains temperature of 1,410-1,480 deg.C partially from the right side gradually. Epitaxial growth is effected at a temperature near the melting point of silicon, and if the heating to 1,410-1,480 deg.C is performed concurrently in the whole region for a long time, the wafer may be melted or warped. In such method of the invention, the wafer is neither damaged nor warped.
More Like This:
Inventors:
HIRAMOTO TATSUMI
Application Number:
JP14469181A
Publication Date:
March 18, 1983
Filing Date:
September 16, 1981
Export Citation:
Assignee:
USHIO ELECTRIC INC
International Classes:
H01L21/20; H01L21/26; (IPC1-7): H01L21/263
Attorney, Agent or Firm:
Torasuke Tahara