PURPOSE: To reduce the damage of a semiconductor device material caused by charged particles, and to enable improvement in uniformity in the surface of a sample to be processed and the increase of the diameter of the sample to be processed in processing equipment of a semiconductor device material.
CONSTITUTION: Both a plasma source 11 for supplying neutral corpuscular rays and a plasma source 12 for supplying reactive excitation atoms or molecules are formed by a single cylindrical discharge tube 1, and both these plasma sources are formed so as to be arranged on the same line in front of a sample to be processed 8. Accordingly, the cost of a device can be reduced because both the plasma source 11 and the plasma source 12 are formed of the single discharge tube, and each particle is uniformly incident on the surface of the sample to be processed and the uniformity of processing in the surface of the sample to be processed is improved because both plasma sources are disposed on the same line in front of the sample to be processed.
YUNOGAMI TAKASHI
MIZUTANI TATSUMI
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