Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS603129
Kind Code:
A
Abstract:
PURPOSE:To make glass as not to be left at improper parts at manufacture of a semiconductor device by a method wherein after the parts intending as not to be adhered with glass are patterned using a photo resist film, a photo resist liquid containing glass powder is applied, and the unnecessary parts are removed. CONSTITUTION:At planar thyristors formed respectively with respective diffusion regions 2-5 in an N type Si substrate 1, an SiO2 film formed when diffusion is completed is removed. Then a photo resist is applied to the whole surface, and the resists 6-8 are left respectively according to photoetching technique at the parts corresponding to gates, cathode parts and scribing lines. Then a photo resist film 9 dispersed with glass powder is formed on the whole surface of the substrate 1. Then, after prebaking is performed, masking exposure is performed to be developed. Then the resists 6-8 are burned off. The necessary parts only are made to be in condition adhered with the glass powder in this stage. Then by performing calcination of the glass, the powder is calcinated to be fused to form glass layers 10. Then by cutting on the scribing lines 14, the substrate is separated into individual pellets.
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Inventors:
IKEDA KAZUKO
Application Number:
JP11135983A
Publication Date:
January 09, 1985
Filing Date:
June 21, 1983
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L21/316; (IPC1-7): H01L21/316
Attorney, Agent or Firm:
Uchihara Shin
Next Patent: JPS603130