PURPOSE: To provide a megnetoresistance sensor in which lowering of magnetic field sensitivity due to conduction of high detecting current is suppressed while retarding fracture of magnetosensitance part.
CONSTITUTION: A protective layer 3 is provided on a magnetoresistive conductive layer 2 oppositely to a base material 1. A bias layer 5 for producing a bias field in the magnetoresistive conductive layer 2 and a pair of electrodes 6 for feeding current to a magnetosensitive part 4 of the magnetoresistive conductive layer 2 are then provided sequentially on the protective layer 3. The protective layer 3 is composed of a compound of at least one kind of element selected from a first group of titanium, vanadium, chrome, zirconium, molybdenum, niobium, hafnium, tantalum, and tungsten, and at least one kind of element selected from a second group of nitrogen, carbon, boron, and silicon.
KOYAMA NAOKI
HINODE KENJI
FURUSAWA KENJI
SHIROISHI YOSHIHIRO
