PURPOSE: To obtain a resist film having stable resist sensitivity and uniform thickness by forming an atm. of a resist solvent vapor near the substrate of a semiconductor and then, coating the substrate with a resist.
CONSTITUTION: A silica layer 3 is formed on a spin head 1 as a silicon wafer 2, and an adhesive of OAP is applied to the layer 3. The vapor 5b of a resist solvent 5a, such as 2-ethoxyethyl acetate, is released from a disc 6 provided with porous material on one side to fill an atm. near and above the wafer 2. The resist contg. said solvent is dropped on the layer 3 rotated together with the head 1 to coat the layer 3 with the resist film 4. The remaining OAP on the layer 3 is exhausted due to the filled resist solvent vapor to give a state almost vacant of it. The presence of the vapor 5b maintains the solvent 5a in the resist film uniform, and a sufficient drying time is obtained in the next backing step.
NAGASHIMA SETSUO
NISHIKATA EIJI
