FORMING METHOD OF SINGLE CRYSTAL SEMICONDUCTOR FILM

Japanese Patent JPS5928327

A

PURPOSE:To obtain a single crystal Si film at a low temperature on a glass substrate of low cost by such an arrangement wherein when crystals composed of an alloy of Au and Si are caused to educe on an amorphous substrate, the orientation of crystals is controlled by the repetitive patterns of Au film. CONSTITUTION:On a quartz glass substrate 11, a film of Au 12 which forms eutectic crystal with Si is caused to adhere thereto, a resist film of specific pattern 13 is provided thereon, and spatter etching is processed on exposed parts of the film 12 and a repetitive pattern of polygon 14 having a vertical angle which is a multiple of about 60 deg. is obtained. Here, the pattern 14 shall be a trapezoid having vertical angles of 60 deg. and 120 deg. and the distance between opposing sides shall be approx. 1mum, and pitch shall be approx. 1.2mum. Next, the substrate 11 is heated up to a temperature higher than the eutectic temperature of Si and Au, and Si is caused to adhere by evaporation, and eutectic alloy of Si-Au is caused to generate between patterns 14, and single crystal Si layer 19 is caused to generate of which crystal direction is aligned, by using surplus Si 18 adhered to the pattern 14. At the same time, Au is moved from the alloy 17 and the desired Si-Au thin film 20 is obtained.

MORI HIDEFUMI
IKEDA MASAHIRO

JP13739282A

February 15, 1984

August 09, 1982

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NIPPON TELEGRAPH & TELEPHONE

H01L27/00; C30B11/12; H01L21/20; H01L21/336; H01L21/84; H01L21/86; H01L29/78; H01L29/786; H01L31/04; (IPC1-7): H01L21/84; H01L27/00; H01L29/78; H01L31/04

Yoshikazu Tani

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