Title:
【発明の名称】半導体装置
Document Type and Number:
Japanese Patent JP2856853
Kind Code:
B2
Abstract:
A semiconductor of the present invention comprises first and second power MOS transistors of the same channel type, which are formed on the same semiconductor chip in a common drain, and means for supplying a control signal to each gate of these transistors. According to the above-mentioned structure, formation of one chip can be obtained by use of a common drain, thereby obtaining a switch member having high integration and high reliance.
Inventors:
NAKAYAMA TSUNEO
Application Number:
JP17595090A
Publication Date:
February 10, 1999
Filing Date:
July 03, 1990
Export Citation:
Assignee:
TOSHIBA KK
International Classes:
H01L31/12; H01L21/76; H01L27/088; H01L27/144; H01L29/78; H03K17/687; H03K17/693; H03K17/78; (IPC1-7): H01L29/78; H03K17/687; H03K17/693; H03K17/78
Domestic Patent References:
| JP575433A | ||||
| JP297113A | ||||
| JP1300568A | ||||
| JP1303761A | ||||
| JP183352U |
Attorney, Agent or Firm:
Takehiko Suzue (3 outside)