Title:
【発明の名称】半導体装置
Document Type and Number:
Japanese Patent JP2889682
Kind Code:
B2
Abstract:
PURPOSE:To form a source and drain into a symmetrical structure by providing a second semiconductor layer integrally protruding from the side part of a first semiconductor layer, and, at least one contact to be electrically connected with the semiconductor substrate. CONSTITUTION:A semiconductor layer 5 is provided with a tongue piece protruding as shown by an alternate long and short dash line, and a quadrilateral region being a main part and the tongue piece form first and second semiconductor layers 6 and 7 respectively, which layers are constituted by the integral semiconductor layer 5. Also, the second semiconductor layer 7 is connected with a semiconductor substrate 2 via a contact C shown by a mark X formed in a first insulating film 4. Because the contact C is not formed under the first semiconductor layer 6 substantially forming an active region, the first semiconductor layer 6 can be formed flatly without irregularity. Further, because a gate 9 formed under the second semiconductor layer 7 and on the first semiconductor layer completely covers the second semiconductor layer 7, no source and drain are formed but this has no effect on the formation of symmetrical source and drain.
Inventors:
MATSUDA JUNICHI
ONO MASAHIRO
ONO MASAHIRO
Application Number:
JP28252790A
Publication Date:
May 10, 1999
Filing Date:
October 19, 1990
Export Citation:
Assignee:
SANYO DENKI KK
International Classes:
H01L27/10; H01L21/02; H01L21/8242; H01L27/108; H01L27/12; H01L29/78; H01L29/786; (IPC1-7): H01L27/108; H01L21/8242; H01L27/12; H01L29/78; H01L29/786
Domestic Patent References:
| JP62104173A | ||||
| JP61139068A | ||||
| JP60189964A | ||||
| JP63241967A | ||||
| JP3208373A | ||||
| JP577161A |
Attorney, Agent or Firm:
Koji Yasutomi (1 person outside)