Title:
【発明の名称】半導体集積回路
Document Type and Number:
Japanese Patent JP3101351
Kind Code:
B2
Abstract:
PURPOSE:To improve irregularities in pair properties by using barrier metal for bipolar transistors constituting a differential pair. CONSTITUTION:Contact holes are formed on a base contact region 23, an emitter region 27 and a collector contact region 29 of an NPN transistor. A base electrode 34 constituted of three-layered structure of aluminum-barrier metal- aluminum is formed in the base contact region 28. An emitter electrode 37 and a collector electrode 38 which are constituted of two-layered structure of barrier metal-aluminum are formed in the emitter region 27 and the collector contact region 29, respectively.
Inventors:
Katsuya Okabe
Application Number:
JP18885191A
Publication Date:
October 23, 2000
Filing Date:
July 29, 1991
Export Citation:
Assignee:
Sanyo Electric Co., Ltd.
International Classes:
G06G7/12; H01L21/28; H01L21/331; H01L21/768; H01L21/8222; H01L23/522; H01L27/082; H01L29/73; H01L29/732; (IPC1-7): H01L21/331; G06G7/12; H01L21/28; H01L21/768; H01L21/8222; H01L27/082; H01L29/73
Domestic Patent References:
| JP5530899A | ||||
| JP58103168A | ||||
| JP4919631A | ||||
| JP5472673A |
Attorney, Agent or Firm:
Masamasa Shibano