Title:
SEMICONDUCTOR RADIATION DETECTOR
Document Type and Number:
Japanese Patent JPS5833877
Kind Code:
A
Abstract:
PURPOSE:To enable to apply a semiconductor radiation detector for a gamma- ray dose meter by reducing the radius of a P-N junction for forming a depletion layer equal to or shorter than the average flying distance of secondary electros, thereby improving dose quality characteristic. CONSTITUTION:The area of a P-N junction for forming a sensitive unit for radiation is set to piR<2> or 4R1R2, where R1, R2<=lS. (However, R1, R2 indicate 1/2 of the radius when the shape of the P-N junction is circle and the length of one side when the shape is a rectangle, and lS indicates the average flying distance of secondary electros.) In one embodiment, a plurality of depletion layers 1, 1, 1 of the P-N junction of small diameter are formed on one Si wafer 9. In this manner, the number of gamma-ray sensitive units having satisfactory dose quality characteistic is increased, and the sensitivity as the radiation detector is accordingly enhanced.
Inventors:
SATOU NORITADA
Application Number:
JP13122481A
Publication Date:
February 28, 1983
Filing Date:
August 21, 1981
Export Citation:
Assignee:
FUJI DENKI SOGO KENKYUSHO KK
FUJI ELECTRIC CO LTD
FUJI ELECTRIC CO LTD
International Classes:
G01T1/24; H01L31/09; H01L31/118; (IPC1-7): G01T1/24; H01L31/00
Attorney, Agent or Firm:
Someya Hitoshi