PURPOSE: To contrive to prolong the life of an apparatus by keeping a clean room clean, by providing a mechanism for supplying inert gas into an exhaust mechanism chamber and exhausting the atmospheric gas in said exhaust mechanism chamber.
CONSTITUTION: The interior of a vapor deposition chamber 12 is brought to a predetermined vacuum state by the exhaust action of an exhaust mechanism 13 while inert gas is supplied into an exhaust mechanism chamber 11 from a supply pipe 16 and exhaust gas due to exhaust mechinery and the stmospheric gas in the exhaust mechaism chamber 11 are exhausted to the outside by a duct 15. In this state, an article to be treated is supplied to the vapor deposition chamber 12 to perform desired vapor deposition treatment of a thin film. Therefore, the clean room in the circumference of a vacuum apparatus 20 is held to a highly clean degree and a semiconductive apparatus high in reliability can be obtained in high yield. In addition, because inert gas is always supplied into the exhaust mechanism chamber 11, the generation of corrosion is inhibited and prolonging life of the vacuum apparatus can be achieved.
SHIMAZAKI AYAKO
MAYAHARA CHIYO
YAMAYOSHI RIE
TOSHIBA MICRO CUMPUTER ENG