Title:
SILICON FILM FORMATION
Document Type and Number:
Japanese Patent JPS5828854
Kind Code:
A
Abstract:
PURPOSE:To easily form an evaporated Si film only inside grooves formed on the surface of an amorphous insulator substrate, by using an amorphous Si film formed by an evaporation method as an Si film when forming an Si single crystal island on an amorphous insulator substrate. CONSTITUTION:A resist film 2 is formed on the surface of a quartz glass 1. Next, resist patterns for a groove work are formed by exposing with ultraviolet lights or far ultraviolet lights using a mask to form a fixed groove pattern and by developing. Subsequently, a groove work is performed on the surface of the quartz glass by a dry etching. Next, an amorphous Si film 3 is heaped over the entire surface by an evaporation method under the state that the resist film 2 is left as it is. In this case, the thickness of the Si film 3 heaped on the side wall of the resist film 2 is formed extremely smaller than a film thickness on the main surface of the substrate. Thus, when immersed in a solution for resist film exfoliation, this solution passes through holes in extremely thin Si film adhered on the resist film side wall and reaches the resist film 2. As the result, it dissolves the resist film 2, and simultaneously the Si film 3 is also removed from the surface of the substrate 1 leaving an Si film only inside the groove.
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Inventors:
KIMURA MASAKAZU
ENDOU NOBUHIRO
ENDOU NOBUHIRO
Application Number:
JP12705981A
Publication Date:
February 19, 1983
Filing Date:
August 13, 1981
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L27/12; H01L21/02; H01L21/20; H01L21/302; H01L21/3065; H01L21/76; H01L21/84; H01L21/86; (IPC1-7): H01L21/205; H01L21/302; H01L27/12
Attorney, Agent or Firm:
Uchihara Shin