Title:
MULTILAYER INTERCONNECTION
Document Type and Number:
Japanese Patent JPS6050944
Kind Code:
A
Abstract:
PURPOSE:To obtain the structure of multilayer interconnection of a small contact resistance by a method wherein the second electrode material film is formed on the surface of an electrode wiring of the first material film, the second electrode material film being provided through a through hole of an interlayer insulation film, while the second electrode wiring of the third electrode material film is provided thereon. CONSTITUTION:The first electrode wiring 12 made of Si is formed on an insulation substrate 11, a Ti or silicide metallic film 13 being formed, a Ti or silicide metallic film 13' being superposed through the through hole 15 of the interlayer insulation film 14, and the Al electrode wiring 16 being provided thereon. This construction enables the reduction of the contact resistance in the connection part of a multilayer electrode interconnection made of hetero metallic films.
More Like This:
Inventors:
IWAMATSU SEIICHI
Application Number:
JP15987583A
Publication Date:
March 22, 1985
Filing Date:
August 30, 1983
Export Citation:
Assignee:
SUWA SEIKOSHA KK
International Classes:
H01L23/522; H01L21/768; (IPC1-7): H01L21/88
Attorney, Agent or Firm:
Top affairs