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Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5854658
Kind Code:
A
Abstract:

PURPOSE: To improve the humidity resistance of a semiconductor device by interposing a coupling agent having both a reaction group which chemically reacts with a lead material and a surface material and a reaction group which chemically reacts with a sealer between the lead material and the surface of a semiconductor element.

CONSTITUTION: A conductive adhesive 3 is dropped to the prescribed position of semiconductor element fixing lead wirings 1a of externally led wirings, and a semiconductor element 2 is placed on the agent. 1%-methylethyl ketone solution of γ-glycidoxypropyltrimetoxysilane is coated on the element 2 and lead wirings 1a, 1b, 1c, which are then heat treated to thermally cure the adhesive 3. Then, a plastic film which is contacted with the surface of the elements 2 and the wirings 1a, 1b, 1c can be formed. Thereafter, the element 2 is connected to the wirings 1a, 1b, 1c, and is transfer sealed with epoxy resin forming material 5. Then, the plastic film has strong adhesive with the material 5 and good water repellency, te humidity resistance can be improved.


Inventors:
NARITA HIROSHI
Application Number:
JP15324681A
Publication Date:
March 31, 1983
Filing Date:
September 28, 1981
Export Citation:
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Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L23/50; H01L23/29; H01L23/31; (IPC1-7): H01L23/30; H01L23/48
Domestic Patent References:
JPS5019359A1975-02-28
JPS5278060A1977-07-01
JPS55143057A1980-11-08
JPS5717137A1982-01-28
Attorney, Agent or Firm:
Uchihara Shin



 
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