Title:
【発明の名称】半導体装置の製造方法
Document Type and Number:
Japanese Patent JP2624709
Kind Code:
B2
Abstract:
PURPOSE:To obtain a polycrystalline silicon film doping method optimally suitable for highly integrated LSIs by impurities into the polycrystalline silicon film by an ion implantation method in which more than two kinds of impurities are implanted with such an implanting energy as the implanting ranges are different. CONSTITUTION:A semiconductor device including such a structure as a polycrystalline silicon film 8 is directly made to be in contact with the semiconductor substrate 5, wherein doping of impurities into the polycrystalline silicon film 3 being made by an ion implantation method in which more than two kinds of impurities are implanted with such an implanting energy as the implanting ranges are different. For example, an n<->-layer 4 is formed after patterning a first polycrystalline silicon layer 1, then by covering the surface and side of a gate electrode 1 with an SiO2 film 2, and As is implanted at an implanting energy of 20-100KeV to a region where a second polycrystalline silicon layer 3 is coated, such implantation being followed then by P at an implanting energy of 40-150KeV. Then it is annealed at 900-1000 deg.C and patterned after activating and re-distributing As and P.
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Inventors:
Haruhiko Tanaka
Akira Sato
Yoshio Sakai
Akira Sato
Yoshio Sakai
Application Number:
JP25148387A
Publication Date:
June 25, 1997
Filing Date:
October 07, 1987
Export Citation:
Assignee:
株式会社日立製作所
International Classes:
H01L27/10; H01L21/225; H01L21/265; H01L21/28; H01L21/336; H01L21/822; H01L21/8242; H01L27/04; H01L27/108; H01L29/78; (IPC1-7): H01L21/28; H01L21/265; H01L21/8242; H01L27/108
Domestic Patent References:
| JP54109787A |
Attorney, Agent or Firm:
Katsuo Ogawa (1 person outside)