PURPOSE: To obtain a polycrystal thin film whose solid growth time is shortened at a low temperature by a method wherein an insulating layer and a first thin film as well as the first thin film whose generation density of a crystal nucleus is high as compared with that of a second thin film and the second thin film are formed respectively in such a way that their interfaces come into contact with each other and the first thin film and the second thin film are changed into polycrystal films from amorphous films.
CONSTITUTION: An amorphous thin film 2 is formed on a glass substrate 1 as an insulating layer, and an amorphous thin film 3 is formed on the amorphous thin film 2. The amorphous thin film 2 and the amorphous thin film 3 are composed of the same amorphous material. In addition, film-formation conditions such as the deposition temperature, the film-formation pressure and the like of the amorphous thin film 2 are controlled in such a way that the generation density of a crystal nucleus becomes high as compared with that of the amorphous thin film 3. When the amorphous thin film 2 and the amorphous thin film 3 are amorphous silicon films, they are changed into polycrystal films so as to become polycrystal silicon films.
| JPS58185498 | DEVICE FOR GROWING THIN FILM IN VAPER PHASE |
| JPH01160007 | CHEMICAL VAPOR GROWTH DEVICE |
TANAKA ATSUSHI
FUJIWARA MASAHIRO
ONO EIZO
