Title:
PRESSURE SENSOR
Document Type and Number:
Japanese Patent JPS59124181
Kind Code:
A
Abstract:
PURPOSE:To obtain a pressure sensor array, whose S/N is excellent at a low cost, by forming an FET element and a piezoelectric element on the same substrate, and electrically connecting one electrode of the piezoelectric element and the gate electrode of the FET. CONSTITUTION:A substrate 201 is a common supporting substrate for a thin film piezoelectric element and a thin film FET element. On said substrate 201, the thin film piezoelectric element is composed of a piezoelectric thin film 203 and electrodes 202 and 204, which are provided so as to hold the film 203 from the upper side and the lower side. Meanwhile, the thin film FET element is composed of an electrode 204 corresponding to a gate electrode, a drain electrode 205, a source electrode 207, a semiconductor layer 206, and an insulating layer 208. The thin film piezoelectric element and the thin film FET element are electrically connected by the electrode 204. In this constitution, since the output of the piezoelectric element is directly inputted to the electrode of the high resistance FET element, impedance matching is excellent, the operating frequency range is broad, and the operation with excellent S/N can be performed.
Inventors:
OSADA YOSHIYUKI
HIRAI YUTAKA
NAKAGIRI TAKASHI
HIRAI YUTAKA
NAKAGIRI TAKASHI
Application Number:
JP23152582A
Publication Date:
July 18, 1984
Filing Date:
December 29, 1982
Export Citation:
Assignee:
CANON KK
International Classes:
H01L41/08; G01L9/00; G01L9/04; H01L29/84; (IPC1-7): H01L41/08
Attorney, Agent or Firm:
Marushima Giichi