PURPOSE: To improve the efficiency of charge transfer, by providing a charge transfer path between each photodetecting element and a charge transfer part in correspondence to the two charge transfer electrodes which are contained in each period of a charge transfer electrode array.
CONSTITUTION: A photoelectric conversing part 2 is formed on a semiconductor substrate 1 by arraying the photodetectors 2a and 2b in a row. At the same time, a charge transfer part CT is formed contiguously to the part 2 via a photo gate PG and a transfer gate TG. The part CT comprises the charge transfer electrodes 1'∼4' which are periodically arranged, and these electrodes are connected regularly to the driving buses 1∼4 respectively. The charge transfer paths 8a and 8b which are demarcated by a charge dam 7 are provided between the detectors 2a and 2b and the part CT and in correspondence to the three electrodes 2', 3' and 4' among the electrodes 1'∼4'. In such way, the width of the charge transfer path is improved to enhance the transfer efficiency. Thus the performance of a solid state image pickup device is improved.
ITOU YUUICHIROU
WATANABE SHIYUUJI
| JPS55104175A | 1980-08-09 | |||
| JPS5255317A | 1977-05-06 | |||
| JPS5232693A | 1977-03-12 | |||
| JPS5218125A | 1977-02-10 |