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Title:
SYNTHESIS METHOD OF SINGLE CRYSTAL OF ARTIFICIAL BERYL
Document Type and Number:
Japanese Patent JPS6081099
Kind Code:
A
Abstract:
PURPOSE:To synthesize single crystal of beryl of high quality economically with high efficiency by controlling the speed of crystal growth. CONSTITUTION:One or >= two kinds among lithium molybdate, molybdenum trioxide, lithium hydroxide, and vanadium pentoxide as flux material are added to a starting material consisting of beryllium oxide, aluminum oxide, and SiO2 having a compositional ratio corresponding to beryl to synthesize single crystal of beryl by forming molten salt by heating the mixture to above the melting temp. of the flux. In this case, one or >= two kinds of the starting materials are sintered or vitrified previously and charged to a vessel separated into three chambers with baffle plates to produce temp. difference in the molten salt prepd. by mixing two kinds (i.e. lithium hydroxide and vanadium pentoxide) in the powder state, synthesizing single crystal of beryl by controlling the speed of the crystal growth.

Inventors:
KASUGA YOSHIHARU
ATOMACHI TADAAKI
TOGAWA EIJI
MORITA YOSHIO
TAKEUCHI MASAAKI
Application Number:
JP19023483A
Publication Date:
May 09, 1985
Filing Date:
October 12, 1983
Export Citation:
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Assignee:
SUWA SEIKOSHA KK
International Classes:
C30B9/00; C30B29/34; (IPC1-7): C30B9/12; C30B29/34
Domestic Patent References:
JPS59111992A1984-06-28
Attorney, Agent or Firm:
Kisaburo Suzuki (1 outside)