Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS594118
Kind Code:
A
Abstract:
PURPOSE:To improve controllability and reproducibility of shallow diffusion with low concentration and stabilize the diffusion work by conducting capsule diffusion with selected total area of a substrate subject to diffusion and a source substrate. CONSTITUTION:When the specific exposure area ratio (total area of exposed section of a substrate 1 to be diffused/total area of exposed section of a source substrate 4 is substantially 1, the surface concentration of the substrate 1 is 1X10<18>cm<-3>, the same as the impurity concentration of the source substrate. As the exposed area ratio increases, the surface concentration decreases, and also the depth of diffusion decreases as the exposed area ratio increases. The surface concentration can be controlled by selecting thus the exposed area ratio.
Inventors:
NAWATA SHIGEAKI
Application Number:
JP11452382A
Publication Date:
January 10, 1984
Filing Date:
June 30, 1982
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/223; (IPC1-7): H01L21/22
Attorney, Agent or Firm:
Koshiro Matsuoka
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