Title:
FORMING METHOD OF FINE HOLE TO INSULATING FILM ON SURFACE OF SEMICONDUCTOR BASE BODY
Document Type and Number:
Japanese Patent JPS6014436
Kind Code:
A
Abstract:
PURPOSE:To form a fine hole in a self-alignment manner by forming an inclined section around a fine hole forming region and utilizing anisotropic etching. CONSTITUTION:An insulating film 2 is formed to a semiconductor base body 1, and a comparatively large hole 3 is formed through etching. A selective epitaxial growth semiconductor layer 4 is shaped to the hole 3 section, and the surface is oxidized to form an oxide film 5. An etching rate depends upon the angle of incidence of projected ions and a polycrystalline section 4a is removed through high-frequency sputtering etching by using argon ions. A selective epitaxial growth semiconductor layer 6 is formed so that the oxide film 5 is exposed in width close by desired opening width. A hole 7 is shaped to the oxide film 5 through high-frequency sputtering etching while the semiconductor layer 6 is also removed partially through etching. The width of the hole 7 is determined by the width of the hole 3 and the thickness of the semiconductor layer 6.
Inventors:
SAKURAI HIROMI
OOGA HIROTOMO
OOGA HIROTOMO
Application Number:
JP12290683A
Publication Date:
January 25, 1985
Filing Date:
July 04, 1983
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/28; H01L21/302; H01L21/3065; (IPC1-7): H01L21/28
Attorney, Agent or Firm:
Masuo Oiwa
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