Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5846646
Kind Code:
A
Abstract:
PURPOSE:To shape an element forming region accurately, and to improve yield and reliability by using a silicon nitride film as a mask for etching silicon in place of Al. CONSTITUTION:A thermal oxide film 201 and the silicon nitride film 202 are shaped onto a silicon substrate 200 in regular succession, the nitride film 202, the SiO2 film 201 and the silicon substrate 200 are removed successively through etching, a wafer is thermally oxidized, and a thermal oxide film 204 is shaped to the silicon substrate 200. When a plasma SiO2 film 205 is deposited onto the whole surface and etched, the plasma SiO2 film is removed only in the side wall section of a stage difference section. The nitride film silicon film 202 is removed through plasma etching while the plasma SiO2 205 on the film 202 is also removed. And a CVDSiO2 film 206 is buried into a slender groove through the same method as a conventional method, and structure in which the silicon oxide film is buried completely into a silicon concave section is obtained.
Inventors:
SATOU MASAKI
SHIBATA SUNAO
KUROSAWA AKIRA
SHIBATA SUNAO
KUROSAWA AKIRA
Application Number:
JP14379781A
Publication Date:
March 18, 1983
Filing Date:
September 14, 1981
Export Citation:
Assignee:
TOKYO SHIBAURA ELECTRIC CO
International Classes:
H01L21/76; H01L21/31; H01L21/762; (IPC1-7): H01L21/95
Attorney, Agent or Firm:
Noriyuki Noriyuki