Title:
FIELD EFFECT TRANSISTOR
Document Type and Number:
Japanese Patent JPS60176271
Kind Code:
A
Abstract:
A thin film insulated gate field effect transistor having an opposite conductivity type island in its channel region. The island is electrically shorted to the transistor gate electrode.
Inventors:
BAANAADO EE MASHIBUAA
Application Number:
JP24088384A
Publication Date:
September 10, 1985
Filing Date:
November 16, 1984
Export Citation:
Assignee:
GEN MOTORS CORP
International Classes:
H01L27/12; H01L29/10; H01L29/417; H01L29/423; H01L29/78; H01L29/786; H01L29/808; (IPC1-7): H01L27/12; H01L29/60; H01L29/78
Attorney, Agent or Firm:
Masao Okabe