Title:
METHOD FOR SYNTHESIZING DIAMOND UNDER LOW PRESSURE
Document Type and Number:
Japanese Patent JPS60118693
Kind Code:
A
Abstract:
PURPOSE:To grow easily a thin film of diamond structure easily and efficiently on a substrate, by passing a mixed gas consisting essentially of H2-CxHy under a low pressure through a space for arc discharge to activate the mixed gas, and introducing the activated gas into a space above a heated substrate. CONSTITUTION:A substrate 4 is placed on a support table 5 provided in a reaction vessel 1, and heated at 300-1,100 deg.C. A mixed gas consisting essentially of H2-CxHy, e.g. a mixed gas of hydrogen and methane under 0.1-100 Torr pressure is introduced from an introductory pipe 2 into the reaction vessel 1 and passed through a space for continuous or intermittent arc discharge between arc discharge electrodes 3, activated and then introduced into the space above a heated substrate 4 to grow a thin film having diamond structure on the substrate 4. Thus, the energy necessary for activation can be easily controlled by controlling the arc discharge, and small consumption of the electrodes 3 is sufficient.
Inventors:
NISHIYAMA AKIO
KIKUCHI NORIBUMI
SHINGIYOUUCHI TAKAYUKI
YAMASHITA HIROAKI
KIKUCHI NORIBUMI
SHINGIYOUUCHI TAKAYUKI
YAMASHITA HIROAKI
Application Number:
JP22180883A
Publication Date:
June 26, 1985
Filing Date:
November 25, 1983
Export Citation:
Assignee:
MITSUBISHI METAL CORP
International Classes:
C01B31/06; C30B25/00; C30B25/02; C30B29/04; (IPC1-7): C01B31/06; C30B25/00; C30B29/04
Domestic Patent References:
| JPS59174507A | 1984-10-03 |
Attorney, Agent or Firm:
Toru Haginoya