Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS59121833
Kind Code:
A
Abstract:
PURPOSE:To prevent the generation of roughness of unevenness on the surface of a substrate by forming a protection film containing arsenic the same as the material of the substrate on the surface of the GaAs semiconductor substrate after ion implantation, and thereafter performing heat-treatment to the semiconductor substrate. CONSTITUTION:E.g. an N type impurity layer 20 is formed by implanting an impurity ion to the main surface of the GaAs semiconductor substrate 11. The protection film 21 composed of a low temperature Si oxide film containing As the same as the element which constitutes the semiconductor substrate 11 is formed on the surface of this impurity layer 20. The entire body of the semiconductor substrate 11 wherein this protection film 21 is formed is heat-treated for 10min, for example, in a nitride atmosphere at 800 deg.C, thus activating the impurity layer 20 wherein the impurity ion is implanted. In this case, the As constituting the semiconductor substrate 11 and the As the same element as that contained in the protection film 21 replenish liberation to each other, the phenomenon of vaporization of As element is prevented, accordingly the state of stable activation is maintained without the generation of roughness of unneveness on the surface of the substrate 11.
Inventors:
OGAWA AKIRA
FUKUMA KAZUNORI
FUKUMA KAZUNORI
Application Number:
JP23402482A
Publication Date:
July 14, 1984
Filing Date:
December 27, 1982
Export Citation:
Assignee:
TOSHIBA KK
International Classes:
H01L21/265; (IPC1-7): H01L21/265
Domestic Patent References:
| JPS5749239A | 1982-03-23 | |||
| JPS5247675A | 1977-04-15 |
Attorney, Agent or Firm:
Takehiko Suzue
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