Title:
DRYETCHING METHOD
Document Type and Number:
Japanese Patent JPS59167019
Kind Code:
A
Abstract:
PURPOSE:To enable to perform an etching on a conductive thin film only without etching an iusulating thin film by a method wherein a conductive substrate on which a conductive thin film is provided through the intermediary of an insulator is placed on the cathode of an electrode through the intermediary of an insulator. CONSTITUTION:Reaction gas is introduced into a reaction chamber 6 by a reaction gas introducing device 8, plasma 18 is generated when a DC current is applied between an anode 9 and a cathode 10, and radical 21 arrives at a sample 16. However, a gate oxide film 2 is formed on the sample 16, and when a Teflon sheet 17 is provided between the cathode and the substrate 1 of the sample 16, the charge of the arrived ion 20 is accumulated until the potential gradient of the cathod drop part 19 is removed, and from that time only the radical 21 alone comes in. On the other hand, the polycrystalline Si film 3 reaches on both ion 20 and the radical 21, but a film 2 reacts on the ion 20 only. Accordingly, no etching is performed on the film 2. As a result, when an etching is performed on the film 3 again after a part of the film 2 has been exposed, the film 2 is not etched.
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Inventors:
OZAKI YOSHIHARU
YOSHIKAWA AKIRA
YOSHIKAWA AKIRA
Application Number:
JP4060583A
Publication Date:
September 20, 1984
Filing Date:
March 14, 1983
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE
International Classes:
H01L21/302; H01L21/3065; (IPC1-7): H01L21/302
Attorney, Agent or Firm:
Junnosuke Nakamura