Title:
WIRING MATERIAL OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS59194467
Kind Code:
A
Abstract:
PURPOSE: To prevent creep phenomenon by employing aluminum alloy which contains Cu, Si and B as a wiring layer.
CONSTITUTION: An aluminum alloy which contains Cu, Si and B at least as the material of the surface of a wiring layer formed on a semiconductor element. To form the entire wirings of Al-Cu-Si-B alloy, the four-element alloy is used as a source by sputtering, and to improve the quality of the wiring surface layer to Al-Cu-Si-B alloy, B or B and Si ions are implanted to the surface layer of the Al-Cu-Si alloy. The composition contents of the Al-Cu-Si-B alloy are such that the total amount of the Si and the B is 10% or less, the ratio of B to Si is in a range of 1/10∼1/2, and particularly desirably in a range of 2/9∼4/9.
Inventors:
OOSHIMA JIROU
ABE MASAYASU
ETSUNO YUTAKA
ABE MASAYASU
ETSUNO YUTAKA
Application Number:
JP6837083A
Publication Date:
November 05, 1984
Filing Date:
April 20, 1983
Export Citation:
Assignee:
TOSHIBA KK
International Classes:
H01L23/52; H01L21/28; H01L21/3205; H01L29/43; (IPC1-7): H01L21/88
Domestic Patent References:
| JPS574155A | 1982-01-09 | |||
| JPS5420681A | 1979-02-16 |
Attorney, Agent or Firm:
Eiji Morota