Title:
OPTICAL SWITCH
Document Type and Number:
Japanese Patent JPS6039615
Kind Code:
A
Abstract:
PURPOSE: To increase a damping coefficient in an off state, to decrease the density of a small number carriers in an on state, and to improve isolation characteristics by using a P type as the material of an active layer, and satisfying specific condition.
CONSTITUTION: A P-N junction element is formed on a substrate of InP and P type In1-XGaXAsYP1-Y is used for the active of the element. In this case, Y is 0.95W1, X=0.4526Y/(1-0.031Y) so as to match a lattice constant with the InP of the substrate, and impurity density is ≤5×1017cm-3. A figure shows the isolation characteristics when a P type is used for the active layer of the P-N junction element (this invention) and when an N type is used (conventional example).
Inventors:
IKEDA MASAHIRO
Application Number:
JP14795283A
Publication Date:
March 01, 1985
Filing Date:
August 15, 1983
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE
International Classes:
G02F1/015; (IPC1-7): G02F1/015
Domestic Patent References:
| JPS5860726A | 1983-04-11 | |||
| JPS5329685A | 1978-03-20 |
Attorney, Agent or Firm:
Keiichi Yamamoto