THIN FILM OF SILICON CONTAINING CRYSTALLITE AND ITS PREPARATION

Title:

THIN FILM OF SILICON CONTAINING CRYSTALLITE AND ITS PREPARATION

Document Type and Number:

Japanese Patent JPS598609

Kind Code:

A

Abstract:

PURPOSE: A thin film of Si wherein an amorphous part containing crystallite and an amorphous part containing no crystal are distributed in a constant order in two-dimensional way, obtained by applying a bias to a netlike grid having an arbitrary pattern set between an Si-containing glow-discharge plasma and a base plate.

CONSTITUTION: A raw material gas consisting of a gas such as silane (e.g., SiH4) shown by the formula SinH2n+2 is diluted with H2 and/or a rare gas, and it is discharged by a high-frequency electromagnetic field to generate a glow discharge plasma. In this case, a netlike grid having an arbitrary pattern is set between the plasma and a base plate, and a bias is applied to the netlike grid by a DC constant-voltage generator. Consequently, an Si thin film wherein an amorphous Si phase region and an amorphous Si phase region containing crystallite are distributed in a constant order is formed on the base plate.

More Like This:

WO/2018/149830	METHOD FOR FORMING Si-CONTAINING FILM
JP2012174668	HIGH-FREQUENCY POWER SUPPLY DEVICE, PLASMA PROCESSING APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR THIN FILM
WO/2013/153695	METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION DEVICE AND PHOTOELECTRIC CONVERSION DEVICE

Inventors:

TANAKA KAZUNOBU
MATSUDA AKIHISA
KUMAGAI KEIJI

Application Number:

JP11478682A

Publication Date:

January 17, 1984

Filing Date:

July 03, 1982

Export Citation:

Click for automatic bibliography generation Help

Assignee:

KOGYO GIJUTSUIN
TOA NENRYO KOGYO KK

International Classes:

C23C16/24; C01B33/02; C23C16/50; H01L21/205; (IPC1-7): C01B33/02; H01L21/205

Attorney, Agent or Firm:

Kiyoaki Takita (2 outside)

Next Patent: CONNECTING BRIDGE