Title:
MILLIMETER WAVE INTEGRATED CIRCUIT AND METHOD OF PRODUCING SAME
Document Type and Number:
Japanese Patent JPS584993
Kind Code:
A
Abstract:
A millimeter wave integrated circuit (MIC) includes both low power components and high power components, e.g. Gunn diodes, disposed on a common semi-insulating semi-conductor substrate. Each high power component is formed in an active epitaxial layer and is provided with a heat sink comprising a thermally conductive material deposited in an opening in the back of the substrate below the compound. The low power components are isolated by an implanted proton layer.
Inventors:
JIYOSEFU MAN
Application Number:
JP10861582A
Publication Date:
January 12, 1983
Filing Date:
June 25, 1982
Export Citation:
Assignee:
ITT
International Classes:
H01L47/02; H01L21/48; H01L23/36; H01L29/864; (IPC1-7): H01L29/90; H01L47/02
Domestic Patent References:
| JPS5329081A | 1978-03-17 |
Attorney, Agent or Firm:
Takehiko Suzue
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