Title:
INORGANIC COMPOUND SINGLE CRYSTAL WAFER
Document Type and Number:
Japanese Patent JPS60181000
Kind Code:
A
Abstract:
PURPOSE:To obtain efficiently a wafer having an assigned mesa direction with a periodic table IIIb group and Vb group comd. single crystal manufactured by Czochralski method by making use of the crystal habit in the increased diameter part. CONSTITUTION:An inorg. compd. single crystal consisting of periodic table IIIb group and Vb group elements grown in the <100> direction is manufactured by Czochralski method. The mesa direction of the <100> faced wafer cut out of such single crystal is assigned in such a way that the direction of the intersected line between the plane having the larger width out of two pairs of the planes generated in the increased diameter part of the single crystal and the face in parallel with the wafer surface is made forward mesa direction and that the direction of the intersected line between the plane having the smaller width and the face in parallel with the wafer surface is made reverse mesa direction.
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Inventors:
MASAI HARUO
IBUKA TOSHIHIKO
NISHIMOTO NAOAKI
IBUKA TOSHIHIKO
NISHIMOTO NAOAKI
Application Number:
JP3705684A
Publication Date:
September 14, 1985
Filing Date:
February 28, 1984
Export Citation:
Assignee:
MITSUBISHI MONSANTO CHEM
MITSUBISHI CHEM IND
MITSUBISHI CHEM IND
International Classes:
C30B29/40; C30B33/00; H01L21/02; H01L21/304; (IPC1-7): C30B29/40; H01L21/02; H01L21/304
Attorney, Agent or Firm:
Hajime Hasegawa